Nanostructuring of Fe films by oblique incidence deposition on a FeSi2 template onto Si(111): Growth, morphology, structure and faceting

被引：15

作者：

Bubendorff, J. L. ^{[1
]}

Garreau, G. ^{[1
]}

Zabrocki, S. ^{[1
]}

Berling, D. ^{[1
]}

Jaafar, R. ^{[1
]}

Hajjar, S. ^{[1
]}

Mehdaoui, A. ^{[1
]}

Pirri, C. ^{[1
]}

机构：

[1] Univ Haute Alsace, CNRS, Lab Phys & Spect Elect, UMR 7014, F-68093 Mulhouse, France

来源：

SURFACE SCIENCE | 2009年 / 603卷 / 02期

关键词：

Solid phase epitaxy; Scanning tunnelling microscopy; Faceting; Growth; Surface structure; morphology; roughness; topography; Iron; Silicon; Oblique deposition; 3-DIMENSIONAL BALLISTIC DEPOSITION; UNIAXIAL MAGNETIC-ANISOTROPY; GRAZING-INCIDENCE; METAL-DEPOSITION; DIMENSIONS; ROUGHNESS; SURFACE; LAYERS;

D O I：

10.1016/j.susc.2008.11.026

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of thin Fe films deposited at oblique incidence on an iron silicide template onto Si(111) single crystal has been investigated as a function of Fe thickness (0 < t(Fe) <= 180 monolayers (MLs)) and incidence angle (0 <= 0 <= 80 degrees). The growth mode is determined in situ by means of scanning tunnelling microscopy (STM) and low energy electron diffraction (LEED). Stripes oriented perpendicularly to the incident atomic flux are formed for 0 >= 30 degrees. Self-correlation functions are used to extract characteristic lengths from STM images. The correlation lengths in the direction of the incident flux (,) and perpendicular to the atomic flux (xi(y)) grow with different powers versus time (xi(x) alpha t(sigma) and xi(y) alpha t(rho), with sigma = 0.34 +/- 0.03 and rho = 0.67 +/- 0.03) following the exact solution of the (1 + 1) dimensional Kardar-Parisi-Zhang (KPZ) equation. The root mean square roughness follows also a scaling law for t(Fe) < 120 ML leading to a growth exponent beta = 0.73 +/- 0.02. Shadowing and steering effects are discussed on the basis of our STM data. (C) 2008 Elsevier BY. All rights reserved.

引用

页码：373 / 379

页数：7

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