Effect of nitrogen pressure on the properties of AlN films grown on nitrided Al(111) substrates by pulsed laser deposition

被引：15

作者：

Wang, Wenliang ^{[1
]}

Liu, Zuolian ^{[1
]}

Yang, Weijia ^{[1
]}

Lin, Yunhao ^{[1
]}

Zhou, Shizhong ^{[1
]}

Qian, Huirong ^{[1
]}

Wang, Haiyan ^{[1
]}

Lin, Zhiting ^{[1
]}

Li, Guoqiang ^{[1
,2
]}

机构：

[1] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

[2] S China Univ Technol, Dept Elect Mat, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China

来源：

MATERIALS LETTERS | 2014年 / 129卷

基金：

中国国家自然科学基金;

关键词：

Epitaxial growth; Thin films; X-ray technique; Morphologies; Structural; Abrupt interface; THIN-FILMS; LAYER;

D O I：

10.1016/j.matlet.2014.05.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN films have been epitaxially grown on nitrided Al(1 1 1) substrates with various nitrogen pressures by pulsed laser deposition with an in-plane alignment of AlN[11-20]//Al[1-10]. The effect of nitrogen pressure on the surface morphologies and structural properties of AlN films is studied in detail. It reveals that AlN films grown at appropriate pressure exhibit very flat and smooth surface with a surface root-mean-square roughness of 1.1 nm, and abrupt interface; while AlN films grown at other pressures show poorer properties. This work presents an optimized growth conditions for the growth of high-quality AlN films for the application of film bulk acoustic wave resonators and surface acoustic wave devices that ask for the flat surface and abrupt interface. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：39 / 42

页数：4

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