Electrical properties of β-FeSi2/Si hetero-diode improved by pulsed laser annealing

被引：0

作者：

Tsuchiya, K ^{[1
]}

Miura, N ^{[1
]}

Matsumoto, H ^{[1
]}

Nakano, R ^{[1
]}

Uekusa, S ^{[1
]}

机构：

[1] Meiji Univ, Sch Sci & Technol, Dept Elect & Commun, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

来源：

PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2004年 / 799卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

beta-phase iron disilicide (beta-FeSi2) was obtained on n-type silicon (111) substrate by using excimer laser annealing (ELA). beta-phase crystal which have good electrical properties was grown within a narrow annealing condition such as energy density. All samples were annealed by excimer laser show n-type characteristic. Graded junction was formed in FeSi2/Si hetero diode.

引用

页码：133 / 138

页数：6