Characterisation of bulk crystals and structures by light-induced transient grating technique

被引：16

作者：

Jarasiunas, K

Lovergine, N

机构：

[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

[2] Univ Lecce, INFM, I-73100 Lecce, Italy

[3] Univ Lecce, Dipartimento Ingn Innnovaz, I-73100 Lecce, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷

关键词：

bulk crystals; light diffraction; GaAs;

D O I：

10.1016/S0921-5107(01)00982-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic and optical properties of bulk crystals and epistructures have been studied via light interaction with inherent growth defects, deep impurities and defect complexes. Excitation by light interference pattern allowed us to monitor spatially-modulated carrier generation, recombination and transport in subnanosecond time domain, determine photogenerated carrier density, lifetime, diffusion coefficient and study defect-related features in an all-optical way. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：100 / 104

页数：5

共 16 条

[1]

EICHLER HJ, 1986, IEEE J QUANT ELECT

[2]

EICHLER HJ, 1986, SPRINGER SERIES OPTI, V50

[3] MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS BY DIFFRACTION FROM PICOSECOND TRANSIENT FREE-CARRIER GRATINGS [J].