A highly linear SiGe double-balanced mixer for 77GHz automotive radar applications

被引：0

作者：

Dehlink, B. ^{[1
,2
]}

Wohlmuth, H. -D. ^{[3
]}

Forstner, H. -P. ^{[2
]}

Knapp, H. ^{[2
]}

Trotta, S. ^{[1
,2
]}

Aufinger, K. ^{[2
]}

Meister, T. F. ^{[2
]}

Boeck, J. ^{[2
]}

Scholtz, A. L. ^{[1
]}

机构：

[1] Vienna Univ Technol, Gusshausstr 25, A-1040 Vienna, Austria

[2] Infineon AG, Neuherberg, Germany

[3] Frequentis GmbH, A-1120 Vienna, Austria

来源：

2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An active double-balanced mixer for automotive applications in the 77GHz range is presented. The circuit includes on-chip baluns both at the RF and the LO port. The mixer was designed and fabricated in a 200GHz f(T) SiGe:C bipolar technology. The chip was characterized by on-wafer measurements. At 77GHz, the conversion gain of the mixer is 11.5dB. The single sideband noise figure at 77GHz is 15.8dB. The input-referred 1 dB compression point at 75 GHz is -0.3 dBm. Measurements across the wafer verified that this mixer circuit is robust against wafer inhomogeneities. The size of the chip is 700 mu m x 900 mu m. The circuit was designed for a supply voltage of 5.5V and draws 75mA.

引用

页码：235 / +

页数：2

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