A highly linear SiGe double-balanced mixer for 77GHz automotive radar applications

被引：0
|
作者：
Dehlink, B. [1 ,2 ]
Wohlmuth, H. -D. [3 ]
Forstner, H. -P. [2 ]
Knapp, H. [2 ]
Trotta, S. [1 ,2 ]
Aufinger, K. [2 ]
Meister, T. F. [2 ]
Boeck, J. [2 ]
Scholtz, A. L. [1 ]
机构：
[1] Vienna Univ Technol, Gusshausstr 25, A-1040 Vienna, Austria
[2] Infineon AG, Neuherberg, Germany
[3] Frequentis GmbH, A-1120 Vienna, Austria
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An active double-balanced mixer for automotive applications in the 77GHz range is presented. The circuit includes on-chip baluns both at the RF and the LO port. The mixer was designed and fabricated in a 200GHz f(T) SiGe:C bipolar technology. The chip was characterized by on-wafer measurements. At 77GHz, the conversion gain of the mixer is 11.5dB. The single sideband noise figure at 77GHz is 15.8dB. The input-referred 1 dB compression point at 75 GHz is -0.3 dBm. Measurements across the wafer verified that this mixer circuit is robust against wafer inhomogeneities. The size of the chip is 700 mu m x 900 mu m. The circuit was designed for a supply voltage of 5.5V and draws 75mA.
引用
收藏
页码：235 / +
页数：2
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