Shallow Donor Impurity Binding Energy in a V-Shaped Quantum Well Under Intense Laser Field

We present a variational calculation for the ground state of the donor under the influence of high frequency laser field in a GaAs/Ga1-xAlxAs V-shaped quantum well for different Al concentrations at the well centre. It is observed that the donor ionization energy decreases drastically as intensity of the laser field increases. Also it decreases as the Al-concentrations decrease. The dependence of the donor binding energy on the well width, Al-concentration and the laser field intensities is discussed. Our results are in good agreement with the previous calculations for other heterostructures in the presence of laser intensity.