A reflection-type vapor cell using anisotropic etching of silicon for micro atomic clocks

被引：18

作者：

Nishino, Hitoshi ^{[1
]}

Hara, Motoaki ^{[2
]}

Yano, Yuichiro ^{[2
]}

Toda, Masaya ^{[1
]}

Kanamori, Yoshiaki ^{[3
]}

Kajita, Masatoshi ^{[2
]}

Ido, Tetsuya ^{[2
]}

Ono, Takahito ^{[1
,4
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Mech Syst Engn, Sendai, Miyagi 9808579, Japan

[2] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[3] Tohoku Univ, Grad Sch Engn, Dept Robot, Sendai, Miyagi 9808579, Japan

[4] Tohoku Univ, Micro Syst Integrat Ctr, Sendai, Miyagi 9800845, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 07期

关键词：

30;

D O I：

10.7567/1882-0786/ab2a3c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports the design, fabrication and evaluation of a reflection-type optical Rb vapor cell for chip-scale micro atomic clocks. To reduce the physical package height, the reflection-type vapor cell is developed, in which optical components can be mounted on one side of the vapor cell. A (100)-oriented Si wafer with a cut-off 9.74 degrees toward [011] direction is used to make 45 degrees mirrors by anisotropic wet etching. 90 degrees mirrors are fabricated by Si deep reactive ion etching and surface planarization using H-2 annealing. Following the detection of D1 optical absorption for Rb atoms, coherent population trapping resonance was observed. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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