Semiconductor-Metal Phase Transition and "Tristable" Electrical Switching in Nanocrystalline Vanadium Oxide Films on Silicon

被引：0

作者：

Tutov, E. A. ^{[1
]}

Goloshchapov, D. L. ^{[2
]}

Zlomanov, V. P. ^{[3
]}

机构：

[1] Voronezh State Tech Univ, Voronezh 394006, Russia

[2] Voronezh State Univ, Voronezh 394036, Russia

[3] Moscow MV Lomonosov State Univ, Moscow 119991, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 06期

关键词：

vanadium oxide; nanocrystalline films; semiconductor-metal phase transition; electrical switching;

D O I：

10.1134/S1063785019060312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependences of the ac conductivity of nanocrystalline mixed vanadium oxide films on silicon revealed a multistep shape of the hysteresis loop observed during the semiconductor-metal phase transition in VO2, which was not manifested in the case of dc measurements. These peculiarities are related to the size effect, heterophase character of vanadium oxide films, and different types of charge carriers in the bulk of nanocrystallites and on their surfaces. The appearance of steps is explained by the phase transition taking place in separate groups of crystallites with close dimensions. The phenomenon of "tristable" electrical switching in these vanadium oxide films was observed for the first time.

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页码：584 / 587

页数：4

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