Study of CuSbSe2 thin films grown by pulsed laser deposition from bulk source material

被引：14

作者：

Goyal, Deepak ^{[1
]}

Goyal, C. P. ^{[2
,3
,4
]}

Ikeda, H. ^{[3
,4
]}

Gopalakrishnan, C. ^{[2
]}

Malar, P. ^{[1
]}

机构：

[1] SRMIST, Res Inst, Dept Phys & Nanotechnol, Kattankulathur 603203, Tamil Nadu, India

[2] SRMIST, Dept Phys & Nanotechnol, Kattankulathur 603203, Tamil Nadu, India

[3] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan

[4] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 121卷 / 121期

关键词：

CuSbSe2; Thin films; Pulsed laser deposition; SOLAR-CELLS; PHOTOSENSITIVITY; EVAPORATION; CU2ZNSNSE4;

D O I：

10.1016/j.mssp.2020.105420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we discuss the details of growth of CuSbSe2 chalcostibite thin films via pulsed laser deposition using bulk ball milled compound. Thin film growth conditions, in particular pulsed laser energy was optimized to obtain the near stoichiometric thin films. Films were grown at room temperature as well as at 400 degrees C and as grown films were post annealed at 400 degrees C to see annealed induced effects. Material characteristics of the thin films were evaluated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, UV-Vis-NIR spectros-copy and Raman spectroscopy studies. Scanning electron microscopy and dynamic force microscope measurements revealed the morphology as well as smoothness of the thin films. Hall coefficient values measured positive and carrier concentration value of 1.2 x 10(18) cm(-3) for the films grown at 400 degrees C. Absorption coefficient values of the order of similar to 10(5) cm(-1) in the entire visible region and band gap of similar to 1.2 eV observed infer favorable photovoltaic characteristics.

引用

页数：7

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