The effect of hydrogen in the mechanism of aluminum-induced crystallization of sputtered amorphous silicon using scanning Auger microanalysis

被引：5

作者：

Hosssain, Maruf ^{[1
]}

Meyer, Harry M., III

Abu-Safe, Husam H.

Naseern, Hameed A.

Brown, William D.

机构：

[1] Univ Arkansas, Arkansas Adv Photovolta Res Ctr, Dept Elect Engn, Bell Engn Ctr 3217, Fayetteville, AR 72701 USA

[2] Oak Ridge Natl Lab, Div Met & Ceram, Microscopy Microanal & Microstruct Grp, Oak Ridge, TN 37831 USA

来源：

THIN SOLID FILMS | 2006年 / 510卷 / 1-2期

关键词：

hydrogen; crystallization; amorphous materials; sputtering;

D O I：

10.1016/j.tsf.2006.01.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The metal-induced crystallization (MIC) of hydrogenated sputtered amorphous silicon (a-Si:H) using aluminum has been investigated using Xray diffraction (XRD) and scanning Auger microanalysis (SAM). Hydrogenated, as well as non-hydrogenated, amorphous silicon (a-Si) films were sputtered on glass substrates, then capped with a thin layer of Al. Following the depositions, the samples were annealed in the temperature range 200 degrees C to 400 degrees C for varying periods of time. Crystallization of the samples was confirmed by XRD. Non-hydrogenated films started to crystallize at 350 degrees C. On the other hand, crystallization of the samples with the highest hydrogen (H-2) content initiated at 225 degrees C. Thus, the crystallization temperature is affected by the H-2 content of the a-Si. Material structure following annealing was confirmed by SAM. In this paper, a comprehensive model for MIC of a-Si is developed based on these experimental results. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：184 / 190

页数：7

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