Graphene oxide based coconut shell waste: synthesis by modified Hummers method and characterization

被引:108
作者
Sujiono, E. H. [1 ]
Zurnansyah [1 ]
Zabrian, D. [1 ]
Dahlan, M. Y. [1 ]
Amin, B. D. [1 ]
Samnur [2 ]
Agus, J. [3 ]
机构
[1] Univ Negeri Makassar, Dept Phys, Lab Mat Phys, Makassar 90224, Indonesia
[2] Univ Negeri Makassar, Dept Mech Engn, Makassar 90224, Indonesia
[3] Univ Islam Negeri Alauddin Makassar, Fac Sci & Technol, Dept Phys, Makassar 92113, Indonesia
关键词
Materials science; Materials chemistry; Organic chemistry; Nanotechnology; Coconut shell waste; Graphene oxide; Band gap energy; CARBON; EXFOLIATION; REDUCTION; GRAPHITE; SHEETS; GROWTH; SIZE;
D O I
10.1016/j.heliyon.2020.e04568
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Graphene oxide (GO) based on coconut shell waste was successfully synthesized using a modified Hummers method, and the obtained GO was confirmed using XRD, FTIR, Raman spectroscopy, UV-Vis spectroscopy, and SEM-EDX. The XRD spectroscopy obtained the fractional content of the 2H graphite phase of 71.53%, 14.47% phosphorus, 10.02% calcium, and 3.97% potassium in coconut shell charcoal, where the GO sample tend to forms a phase of reduced graphene oxide (rGO). FTIR spectra shows compound functional groups of hydroxyl (OH) at peak 1 (3449.92 cm(-1)), carboxyl (-COOH) at peak 2 (1719.42 cm(-1)) and peak 3 (1702.62 cm(-1)), and alcohol (C-OH) at peak 4 (1628.12 cm(-1)) and epoxy (CO) at peak 5 (1158.51 cm(-1)), which is similar to the GO synthesis from pure graphite. Raman spectroscopy analysis shows that the value of the ID/IG intensity ratio of the GO sample was 0.89 with a 2D single layer, and SEM results showed that surface morphology with an abundance of granular particles were found with different size distribution. The UV-visible results showed sufficient optical properties characterized by the spectrum, which formed because of the light absorption of the energy passed on the sample. The bandgap energy value of the sample obtained by the Tauc plot method was 4.38 eV, which indicates semiconductor properties.
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页数:8
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