CMOS detector technology

被引:17
作者
Hoffman, Alan [1 ]
Loose, Markus
Suntharalingam, Vyshnavi
机构
[1] Raytheon Vis Syst, Goleta, CA 93117 USA
[2] Rockwell Sci Co, Thousand Oaks, CA USA
[3] MIT, Lincoln Lab, Lexington, MA 02173 USA
关键词
APS; active pixel sensor; CCD; CMOS; focal plane array; HgCdTe; hybrid; image sensor; InSb; three-dimensionally stacked circuits; vertical integration;
D O I
10.1007/s10686-005-9013-2
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
An entry level overview of state-of-the-art CMOS detector technology is presented. Operating principles and system architecture are explained in comparison to the well-established CCD technology, followed by a discussion of important benefits of modern CMOS-based detector arrays. A number of unique CMOS features including different shutter modes and scanning concepts are described. In addition, sub-field stitching is presented as a technique for producing very large imagers. After a brief introduction to the concept of monolithic CMOS sensors, hybrid detectors technology is introduced. A comparison of noise reduction methods for CMOS hybrids is presented. The final sections review CMOS fabrication processes for monolithic and vertically integrated image sensors.
引用
收藏
页码:111 / 134
页数:24
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