Thermal properties of InGaN Laser Diodes and Arrays

被引：2

作者：

Stanczyk, Szymon ^{[1
]}

Kafar, Anna ^{[1
]}

Targowski, Grzegorz ^{[2
]}

Wisniewski, Przemek ^{[1
,2
]}

Makarowa, Irina ^{[2
]}

Suski, Tadeusz ^{[1
]}

Perlin, Piotr ^{[1
,2
]}

机构：

[1] Inst High Pressure Phys Unipress, Al Prymasa Tysiaclecia 98, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, PL-01142 Warsaw, Poland

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES VIII | 2013年 / 8625卷

关键词：

InGaN; laser diodes; laser arrays; thermal properties; lifetime;

D O I：

10.1117/12.2002494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Junction temperature of a laser diode (LD) determines the value of threshold current, maximum achievable power and device lifetime. In this work we studied this parameter by a method of comparing current-voltage characteristics measured under pulse bias (at various temperatures) with DC characteristic obtained at room temperature. As exemplary devices we chose various laser diode arrays and single emitter laser with different substrate thickness. The results show, that the primary factor determining thermal resistance of the device is the chip's surface, which means, that a dominating mechanism is related with a heat transfer between the chip and the heat sink.

引用

页数：9

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