High spatial resolution subsurface thermal emission microscopy

被引：61

作者：

Ippolito, SB

Thorne, SA

Eraslan, MG

Goldberg, BB

Ünlü, MS

Leblebici, Y

机构：

[1] Boston Univ, Dept Phys & Elect & Comp Engn, Boston, MA 02215 USA

[2] Boston Univ, Photon Ctr, Boston, MA 02215 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 22期

关键词：

D O I：

10.1063/1.1758308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We apply the numerical aperture increasing lens technique to subsurface thermal emission microscopy of Si integrated circuits. We achieve improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy. We experimentally demonstrate a lateral spatial resolution of 1.4 mum and a longitudinal spatial resolution of 7.4 mum, for thermal imaging at free space wavelengths up to 5 mum. (C) 2004 American Institute of Physics.

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收藏

页码：4529 / 4531

页数：3

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