A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure

This paper presents a new gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET). The 3-D numerical simulation demonstrates that this new device has steep subthreshold swing (<60 mV/dec) over several orders of magnitude of drain current, suppressed drain-induced barrier-lowering of similar to 46 mV/V and enhanced I-on/I-off ratio up to 10(9) orders of magnitude. It is found that I-on begins to increase when SiO2 core radius exceeds a specified value (similar to 4 nm) due to quantum confinement effect. By modulation of the SiO2 core radius and Si shell doping, an optimized manufacturing solution of this kind of the device is obtained.