Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

被引：47

作者：

Gu, Yi ^{[1
]}

Wang, Kai ^{[1
]}

Zhou, Haifei ^{[1
]}

Li, Yaoyao ^{[1
]}

Cao, Chunfang ^{[1
]}

Zhang, Liyao ^{[1
]}

Zhang, Yonggang ^{[1
]}

Gong, Qian ^{[1
]}

Wang, Shumin ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

NANOSCALE RESEARCH LETTERS | 2014年 / 9卷

基金：

中国国家自然科学基金;

关键词：

InPBi; HRXRD; Absorption; Photoluminescence; Molecular beam epitaxy; BAND-GAP; BISMUTH;

D O I：

10.1186/1556-276X-9-24

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with x (Bi) < 2.4%. The PL peak position varies from 1.4 to 1.9 mu m, far below the measured InPBi bandgap.

引用

页数：5

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