Sulfur promoted n-π* electron transitions in thiophene-doped g-C3N4 for enhanced photocatalytic activity

被引:125
|
作者
Ge, Feiyue [1 ]
Huang, Shuquan [1 ]
Yan, Jia [2 ]
Jing, Liquan [1 ]
Chen, Feng [1 ]
Xie, Meng [3 ]
Xu, Yuanguo [1 ]
Xu, Hui [2 ]
Li, Huaming [2 ]
机构
[1] Jiangsu Univ, Sch Chem & Chem Engn, Zhenjiang 212013, Jiangsu, Peoples R China
[2] Jiangsu Univ, Inst Energy Res, Zhenjiang 212013, Jiangsu, Peoples R China
[3] Jiangsu Univ, Sch Pharm, Zhenjiang 212013, Jiangsu, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Thiophene; g-C3N4; Lone pairs on sulfur; n-pi* Transition; Visible light photocatalysis; GRAPHITIC CARBON NITRIDE; 2-DIMENSIONAL CONJUGATED POLYMERS; OPTICAL-ABSORPTION; CHARGE-TRANSFER; BAND-STRUCTURE; H-2; EVOLUTION; NANOSHEETS; EFFICIENT; WATER; PERFORMANCE;
D O I
10.1016/S1872-2067(20)63674-9
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Expanding the optical absorption range of photocatalysts is still a key endeavor in graphitic carbon nitride (g-C3N4) studies. Here, we report on a novel thiophene group extending the optical property, which is assigned to n-pi* electronic transitions involving the two lone pairs on sulfur (TLPS). The as-prepared samples, denoted as CN-ThA(x) (where x indicates the amount of ThA added, mg), showed an additional absorption above 500 nm as compared to pristine g-C3N4. Further, the thiophene group enhanced charge carrier separation to suppress e(-)/h(+) pair recombination. The experimental results suggest that the thiophene group can obstruct the polymerization of melem to generate a large plane, thus exposing the lone electron pairs on the sulfur. The photocatalytic activity was evaluated in the decomposition of bisphenol A and H-2 evolution. Compared with g-C3N4, the optimized CN-ThA30 sample led to a 6.6- and 2-fold enhancement of the degradation and H-2 generation rates, respectively. The CN-ThA30 sample allowed for synchronous H-2 production and BPA decomposition. (C) 2021, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:450 / 459
页数:10
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