Ultrashort carrier lifetime of vapor-liquid-solid-grown GaN/InGaN multi-quantum-well coaxial nanorods

被引：15
作者：
Ebaid, Mohamed [1 ]
Kang, Jin-Ho [1 ]
Lim, Seung-Hyuk [2 ]
Ko, Suk-Min [2 ]
Cho, Yong-Hoon [2 ]
Ryu, Sang-Wan [1 ]
机构：
[1] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Phys & KI NanoCentury, Taejon 305701, South Korea
来源：
ACTA MATERIALIA | 2014年 / 65卷
基金：
新加坡国家研究基金会;
关键词：
GaN; Nanowires; Time-resolved photoluminescence; Lifetime; GAN NANOWIRES; CORE-SHELL; INGAN/GAN;
D O I：
10.1016/j.actamat.2013.11.058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Luminescence and carrier dynamics of GaN/InGaN multi-quantum-well coaxial nanorods (MCNRs) were studied by means of photoluminescence (PL), cathodoluminescence (CL) and time-resolved PL (TRPL). The PL of as-grown MCNRs showed an intense blue emission together with broad emission at longer wavelengths. CL measurements of several single MCNRs attributed the broad emission to the wetting layer frequently observed in vapor-liquid-solid-grown nanorods. Non-single exponential intensity decays were observed by TRPL, which were ascribed to the In fluctuation in the InGaN alloy. Radiative and non-radiative lifetimes were then calculated via a stretched exponential model. An ultrafast carrier lifetime in the range of a few tens of picoseconds along with a high internal quantum efficiency (IQE) of about 59% resulted. The ultrafast carrier lifetimes were attributed to the improvement in the carrier collection efficiency due to the radial heterostructuring of GaN with InGaN shells, while the high IQE implied that carriers were mostly recombined radiatively. This study reveals that the coaxial growth of InGaN with GaN nanorods resulted in an ultrafast carrier lifetime and a luminescence efficiency that could be controlled by adjusting the growth temperature gap between the GaN and the InGaN. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：118 / 124
页数：7
相关论文
共 40 条
[1]   Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies [J].
Albert, S. ;
Bengoechea-Encabo, A. ;
Lefebvre, P. ;
Barbagini, F. ;
Sanchez-Garcia, M. A. ;
Calleja, E. ;
Jahn, U. ;
Trampert, A. .
APPLIED PHYSICS LETTERS, 2012, 100 (23)
[2]   GaN nanowire surface state observed using deep level optical spectroscopy [J].
Armstrong, A. ;
Li, Q. ;
Lin, Y. ;
Talin, A. A. ;
Wang, G. T. .
APPLIED PHYSICS LETTERS, 2010, 96 (16)
[3]   Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires [J].
Baird, Lee ;
Ong, C. P. ;
Cole, R. Adam ;
Haegel, N. M. ;
Talin, A. Alec ;
Li, Qiming ;
Wang, George T. .
APPLIED PHYSICS LETTERS, 2011, 98 (13)
[4]   Spin Relaxation in InGaN Quantum Disks in GaN Nanowires [J].
Banerjee, Animesh ;
Dogan, Fatih ;
Heo, Junseok ;
Manchon, Aurelien ;
Guo, Wei ;
Bhattacharya, Pallab .
NANO LETTERS, 2011, 11 (12) :5396-5400
[5]   Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111) [J].
Cardin, V. ;
Dion-Bertrand, L. I. ;
Gregoire, P. ;
Nguyen, H. P. T. ;
Sakowicz, M. ;
Mi, Z. ;
Silva, C. ;
Leonelli, R. .
NANOTECHNOLOGY, 2013, 24 (04)
[6]   Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale [J].
Chan, Christopher C. S. ;
Reid, Benjamin P. L. ;
Taylor, Robert A. ;
Zhuang, YiDing ;
Shields, Philip A. ;
Allsopp, Duncan W. E. ;
Jia, Wei .
APPLIED PHYSICS LETTERS, 2013, 102 (11)
[7]   Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars [J].
Chang, J. -R. ;
Chang, S. -P. ;
Li, Y. -J. ;
Cheng, Y. -J. ;
Sou, K. -P. ;
Huang, J. -K. ;
Kuo, H. -C. ;
Chang, C. -Y. .
APPLIED PHYSICS LETTERS, 2012, 100 (26)
[8]   Controlled growth mode of high-aspect-ratio GaN nanorods by Ni/In/Ga catalyst [J].
Ebaid, Mohamed ;
Kang, Jin-Ho ;
Lee, June Key ;
Ryu, Sang-Wan .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (38)
[9]   InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon [J].
Guo, Wei ;
Banerjee, Animesh ;
Bhattacharya, Pallab ;
Ooi, Boon S. .
APPLIED PHYSICS LETTERS, 2011, 98 (19)
[10]   Epitaxial lateral overgrowth techniques used in group III nitride epitaxy [J].
Hiramatsu, K .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (32) :6961-6975
1234