Mode of arsenic incorporation in HgCdTe grown by MBE

被引：55
作者：
Sivananthan, S
Wijewarnasuriya, PS
Aqariden, F
Vydyanath, HR
Zandian, M
Edwall, DD
Arias, JM
机构：
[1] AVYD DEVICES,HUNTINGTON BEACH,CA 92615
[2] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91358
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 06期
关键词：
arsenic doping; HgCdTe; molecular beam epitaxy (MBE); p-type doping; secondary ion mass spectrometry (SIMS);
D O I：
10.1007/s11664-997-0205-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. Obtained results indicate that arsenic was successfully incorporated as accepters in MBE-HgCdTe layers after a low temperature anneal. Secondary ion mass spectrometry and Hall effect measurements confirm that arsenic is incorporated with an activation yield of up to 100%. This work confirms that arsenic can be used as an effective dopant of MBE-HgCdTe after a low temperature annealing under Hg-saturated conditions.
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收藏
页码：621 / 624
页数：4
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