Design of LNA using On-Chip Inductor for Ku-Band Application

被引：0

作者：

Sharma, Vijay ^{[1
]}

Hashmi, M. S. ^{[1
]}

机构：

[1] IIIT Delhi, Elect & Commun, Delhi, India

来源：

PROCEEDINGS OF THE 2017 INTERNATIONAL CONFERENCE ON MULTIMEDIA, SIGNAL PROCESSING AND COMMUNICATION TECHNOLOGIES (IMPACT) | 2017年

关键词：

Low Noise Amplifier; On-chip inductors; Noise; Ku-Band; LOW-NOISE AMPLIFIER; CMOS LNA; RECEIVERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple LNA design scheme operating at Ku-Band (17 GHz) is presented in this paper. The concept has been validated in 0.09 mu m CMOS process using on-chip inductors. It has been shown that the on-chip inductor technique reduces the contribution of spectral noise current due to inductor series resistance and also provides a good matching at the LNA input and output at Ku-Band. The on-chip inductor also allows fine control and adjustment of resonance frequency.

引用

页码：199 / 203

页数：5

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