Implications of Device Timing Variability on Full Chip Timing
被引:0
作者:
Grochowski, Ed
论文数: 0引用数: 0
h-index: 0
机构:
Intel Corp, Mailstop SC12-501,2200 Mission Coll Blvd, Santa Clara, CA 95054 USAIntel Corp, Mailstop SC12-501,2200 Mission Coll Blvd, Santa Clara, CA 95054 USA
Grochowski, Ed
[1
]
Annavaram, Murali
论文数: 0引用数: 0
h-index: 0
机构:
Univ So Calif, Dept Elect Engn Syst, Los Angeles, CA 90089 USAIntel Corp, Mailstop SC12-501,2200 Mission Coll Blvd, Santa Clara, CA 95054 USA
Annavaram, Murali
[2
]
Reed, Paul
论文数: 0引用数: 0
h-index: 0
机构:
Intel Corp, Santa Clara, CA 95051 USAIntel Corp, Mailstop SC12-501,2200 Mission Coll Blvd, Santa Clara, CA 95054 USA
Reed, Paul
[3
]
机构:
[1] Intel Corp, Mailstop SC12-501,2200 Mission Coll Blvd, Santa Clara, CA 95054 USA
[2] Univ So Calif, Dept Elect Engn Syst, Los Angeles, CA 90089 USA
[3] Intel Corp, Santa Clara, CA 95051 USA
来源:
ISPD'08: PROCEEDINGS OF THE 2008 ACM INTERNATIONAL SYMPOSIUM ON PHYSICAL DESIGN
|
2008年
关键词:
Performance;
Design;
Reliability;
D O I:
暂无
中图分类号:
TP301 [理论、方法];
学科分类号:
081202 ;
摘要:
As process technologies continue to scale, the magnitude of within-die device parameter variations is expected to increase and may lead to significant timing variability. This talk presents a quantitative evaluation of how low level device timing variations impact the timing at the functional block level. We evaluate two types of timing variations: random and systematic variations. The study introduces random and systematic timing variations to several functional blocks in Intel(R) Core(TM) Duo microprocessor design database and measures the resulting timing margins. The primary conclusion of this research is that as a result of combining two probability distributions (the distribution of the random variation and the distribution of path timing margins) functional block timing margins degrade non-linearly with increasing variability.