Preparation and characterization of Sb-doped SnO2 thin films from colloidal precursors

被引:32
作者
Hu, Y [1 ]
Hou, SH [1 ]
机构
[1] Tatung Univ, Dept Mat Engn, Taipei 104, Taiwan
关键词
Sb-doped SnO2; colloidal precursors; sol-gel method;
D O I
10.1016/j.matchemphys.2004.01.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sb-doped SnO2 films have been prepared by the sol-get method with the colloidal precursors. The colloidal precursors were prepared by adding urea into the SnCl4 and SbCl3 aqueous solution. The crystalline structure of the colloidal particles and the films are rutile-type structure examined by X-ray diffraction technique. The dependencies of electrical properties of the films on the firing temperature and Sb content have been studied. Conductivity and carrier concentration increase as the Sb concentration increases from 0 to 10%. The transmittance of the films firing at 600 degreesC was about 92% in the 450-800 nm wavelength range. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:21 / 25
页数:5
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