Study of the photoresponse behavior of a high barrier Pd/MoS2/Pd photodetector

Photoresponse characteristics of monolayer MoS2 based metal-semiconductor-metal devices using high work function metal palladium have been investigated. The Pd-MoS2 based MSM device shows a very low dark current of the order of pA. The device exhibits significant current enhancement after illumination with the responsivity of 0.8 A W-1 at power density of 2 mW cm(-2) for 650nm laser. The linear dependence of photocurrent with power density reveals that the trap states have much less effect on the performance of the fabricated device. Responsivity was observed to enhance with the increasing power density of incident laser. The optoelectronic performance of the fabricated device was examined by current measurement at higher operating temperatures up to 120 degrees C and photo to dark current ratio showed decrement with the increase in temperature.