Electric-field-controlled nonvolatile magnetic switching and resistive change in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) heterostructure at room temperature

被引：14
作者：
Zhao, Wenbo [1 ]
Zhang, Dalong [1 ]
Meng, Dechao [1 ]
Huang, Weichuan [1 ]
Feng, Lei [1 ]
Hou, Chuangming [1 ]
Lu, Yalin [1 ]
Yin, Yuewei [1 ,2 ]
Li, Xiaoguang [1 ,3 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China
[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[3] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 26期
关键词：
MULTIFERROIC HETEROSTRUCTURES; MAGNETORESISTANCE; ANISOTROPY; STRAIN;
D O I：
10.1063/1.4973355
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Control over nonvolatile magnetization rotation and resistivity change by an electric field in La0.6Sr0.4MnO3 thin films grown on (011) oriented 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) substrates are studied. By utilizing an in-plane strain induced by a side ferroelectric switching with pulsed electric fields from -2.5 kV/cm to +5 kV/cm along [01 (1) over bar], a nonvolatile and reversible 90 degrees-rotation of the magnetic easy-axis is achieved, corresponding to -69.68% and +174.26% magnetization switching along the [100] and [01 (1) over bar] directions, respectively. The strain induced nonvolatile resistivity change is approximately 3.6% along the [01 (1) over bar] direction. These findings highlight potential strategies for electric-field-driven spintronic devices. Published by AIP Publishing.
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页数：5
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