A nitrogen-hyperdoped silicon material formed by femtosecond laser irradiation

被引：63

作者：

Dong, Xiao ^{[1
]}

Li, Ning ^{[2
]}

Zhu, Zhen ^{[1
]}

Shao, Hezhu ^{[1
]}

Rong, Ximing ^{[1
]}

Liang, Cong ^{[2
]}

Sun, Haibin ^{[2
]}

Feng, Guojin ^{[3
]}

Zhao, Li ^{[2
]}

Zhuang, Jun ^{[1
]}

机构：

[1] Fudan Univ, Shanghai Engn Res Ctr Ultraprecis Opt Mfg, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China

[2] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[3] Natl Inst Metrol, Spectrophotometry Lab, Beijing 100013, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 09期

关键词：

OXYGEN PRECIPITATION; NF3; DISSOCIATION; DISCHARGES; MECHANISMS; PLASMAS;

D O I：

10.1063/1.4868017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A supersaturation of nitrogen atoms is found in the surface layer of microstructured silicon after femtosecond (fs) laser irradiation in NF3. The average nitrogen concentration in the uppermost 50 nm is about 0.5 +/- 0.2 at.%, several orders of magnitude higher than the solid solubility of nitrogen atoms in silicon. The nitrogen-hyperdoped silicon shows high crystallinity in the doped layer, which is due to the repairing effect of nitrogen on defects in silicon lattices. Nitrogen atoms and vacancies can be combined into thermal stable complexes after fs laser irradiation, which makes the nitrogen-hyperdoped silicon exhibit good thermal stability of optical properties. (C) 2014 AIP Publishing LLC.

引用

页数：4

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