Local epitaxial growth of aluminum nitride and molybdenum thin films in fiber texture using aluminum nitride interlayer

被引:28
作者
Kamohara, Toshihiro
Akiyama, Morito
Ueno, Naohiro
Nonaka, Kazuhiro
Kuwano, Noriyuki
机构
[1] AIST, On Site Sensing & Diagnosis Res Lab, Tosu, Saga 8410052, Japan
[2] Kyushu Univ, Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan
关键词
D O I
10.1063/1.2337558
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have found the local epitaxial growth of aluminum nitride (AlN) and molybdenum (Mo) films in fiber texture, although the interface between the AlN and Mo films has different crystal symmetries. The local heteroepitaxial relationship is (0001)AlN[2 (1) over bar(1) over bar0]parallel to(110)Mo[(1) over bar 11]parallel to(0001)AlN[2 (1) over bar(1) over bar0]. The AlN films changes from nonequiaxed microstructures to equiaxed columnar structures. The authors think that the AlN interlayer is effective in decreasing the crystallization energy of the Mo electrode due to the coherent heteroepitaxial nucleation. It is interesting that the local heteroepitaxial relationship does not satisfy the criteria for heteroepitaxial growth. (c) 2006 American Institute of Physics.
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页数:3
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