Improvement of Cs-induced surface roughness for high depth resolution profiling of CdZnSe/ZnSe multilayer films

被引：1

作者：

Takakuwa, C ^{[1
]}

Tomita, M ^{[1
]}

Hatanaka, T ^{[1
]}

Suzuki, I ^{[1
]}

Franco, G ^{[1
]}

Yamaguchi, H ^{[1
]}

机构：

[1] INST NATL SCI APPL,F-31077 TOULOUSE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1996年 / 103卷 / 03期

关键词：

D O I：

10.1016/0169-4332(96)00529-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Cs ion bombardment during secondary ion mass spectrometry induces surface roughness such as precipitates and ripples on ZnSe. These ripples and precipitates cause the degradation of depth resolution. The size and number of precipitates become larger with the decreasing incidence angle of the Cs ion beam. Large Cs incidence angles and sample cooling are found to suppress the above surface roughness and realize high depth resolution profiling of CdZnSe/ZnSe multilayer films.

引用

页码：255 / 260

页数：6

共 5 条

[1]

GRIES WH, 1992, P SIMS, V8, P323

[2]

HATADA M, 1994, P SIMS, V9, P738

[3] SURFACE-ROUGHNESS DEVELOPMENT DURING SPUTTERING OF GAAS AND INP - EVIDENCE FOR THE ROLE OF SURFACE-DIFFUSION IN RIPPLE FORMATION AND SPUTTER CONE DEVELOPMENT [J].