Neural network modeling of active devices for use in MMIC design

被引：5

作者：

Günes, F ^{[1
]}

Torpi, H ^{[1
]}

Çetiner, BA ^{[1
]}

机构：

[1] Yildiz Tech Univ, Elect & Commun Engn Dept, TR-80750 Istanbul, Turkey

来源：

ARTIFICIAL INTELLIGENCE IN ENGINEERING | 1999年 / 13卷 / 04期

关键词：

modeling; active device; microwave; neural network;

D O I：

10.1016/S0954-1810(99)00011-4

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This work can be classified into three parts: The first part is a multidimensional signal-noise neural network model for a microwave small-signal transistor. Here the device is modeled by a black box, whose small signal and noise parameters are evaluated through a neural network, based upon the fitting of both these parameters for multiple bias and configuration with their target values. The second part is the computer simulation of the possible performance (F, V-i, G(max)) triplets. In the final part, which is the combination of the first two parts, the performance curves are obtained using the relationships among operation conditions f, V-CE, and I-CE; the noise figure, input VSWR and maximum stable transducer gain. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：385 / 392

页数：8