Temperature Dependent Current-Voltage Characteristics of Iron-Phthalocyanine Thin Films

被引：3

作者：

Samanta, Soumen ^{[1
]}

Singh, Ajay ^{[1
]}

Debnath, A. K. ^{[1
]}

Aswal, D. K. ^{[1
]}

Gupta, S. K. ^{[1
]}

Yakhmi, J. V. ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 9卷 / 09期

关键词：

Iron Phthalocyanine; Hysteresis; Space Charge Limited Conduction; MOLECULAR-BEAM EPITAXY; RAY PHOTOELECTRON-SPECTROSCOPY; MEMORY DEVICE; ELECTRICAL-TRANSPORT; NONVOLATILE MEMORY; POLYMER; OXYGEN; SI; DIODES;

D O I：

10.1166/jnn.2009.1170

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The current-voltage (I-V) characteristics of the crystalline a-phase iron phthalocyanine (FePc) thin films grown by molecular beam epitaxy have been investigated by using a planar geometry in which the metal electrodes are separated by 15 Am. By carrying out the room temperature I-V measurements on vacuum annealed (200 degrees C for 30 min under 10(-6) torr) FePc thin films under vacuum and after exposing them to the air, we demonstrate that the hysteresis in FePc films is intimately related to the filling and cle-filling of surface traps created by chemisorbed oxygen. The presence of chemisorbed oxygen has been confirmed by the X-ray photoelectron spectroscopy. Room temperature I-V characteristics of air exposed films showed ohmic conduction in the lower voltage range and space-charge-limited-conductivity (SCLC) in the relatively high voltage. Temperature dependent measurements show that the hysteresis disappears at 250 K and the surface traps are distributed in energy about 0.22 eV deep.

引用

页码：5262 / 5267

页数：6

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