Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions

被引：8

作者：

Aggarwal, Neha ^{[1
,2
]}

Krishna, Shibin ^{[1
,2
]}

Jain, Shubhendra Kumar ^{[1
,2
]}

Mishra, Monu ^{[1
,2
]}

Maurya, K. K. ^{[1
]}

Singh, Sandeep ^{[1
]}

Kaur, Mandeep ^{[1
]}

Gupta, Govind ^{[1
,2
]}

机构：

[1] CSIR, NPL, Dr KS Krishnan Rd, New Delhi 110012, India

[2] CSIR, Acad Sci & Innovat Res, NPL Campus,Dr KS Krishnan Rd, New Delhi 110012, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2019年 / 243卷

关键词：

AlN; Epitaxial growth; Microstructures; MBE; Screw dislocations; Si Substrate; SI; 111; SUBSTRATE; EPITAXIAL-GROWTH; BUFFER LAYER; GAN LAYERS; SI(111); FILMS; HETEROSTRUCTURES; AIN;

D O I：

10.1016/j.mseb.2019.03.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The morphological evolution of AlN microstructures by varying the growth temperature and Al/N flux ratio on Si (111) substrate via plasma-assisted molecular beam epitaxy has been investigated. The transformations in microstructures of AlN grown along the c-plane were explored as a function of N-2-flow rate, growth temperature and Al-flux. The structural analysis carried out using high resolution X-ray diffraction reveals single crystalline quality with reduced full widths at half maximum value of 15 arcmin corresponding to a screw dislocation density of 8.5 x 10(8) cm(-2). The topographical study of AlN grown by modulating growth conditions revealed an average surface roughness of 6.9 nm. It was exemplified that interplay between higher growth temperature and nitrogen flow rate is desired to prevent condensation of metallic Al on the surface. Also, the AlN pertaining less screw dislocation density leads to lower dark current which can be fruitful for various optoelectronic applications like vacuum-UV photodetectors.

引用

页码：71 / 77

页数：7

共 39 条

[1] A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers [J].

Aggarwal, Neha ;

Krishna, Shibin ;

Sharma, Alka ;

Goswami, Lalit ;

Kumar, Dinesh ;

Husale, Sudhir ;

Gupta, Govind .

ADVANCED ELECTRONIC MATERIALS, 2017, 3 (05)

[2] Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD [J].

Arslan, Engin ;

Ozturk, Mustafa K. ;

Teke, Ali ;

Ozcelik, Suleyman ;

Ozbay, Ekmel .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (15)

[3] Microstructure of low temperature grown AlN thin films on Si(111) [J].

Auner, GW ;

Jin, F ;

Naik, VM ;

Naik, R .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) :7879-7883

[4] Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD [J].

Bak, S. J. ;

Mun, D. -H. ;

Jung, K. C. ;

Park, J. H. ;

Bae, H. J. ;

Lee, I. W. ;

Ha, J. -S. ;

Jeong, T. ;

Oh, T. S. .

ELECTRONIC MATERIALS LETTERS, 2013, 9 (03) :367-370

[5] Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy [J].

Calleja, E ;

SanchezGarcia, MA ;

Monroy, E ;

Sanchez, FJ ;

Munoz, E ;

SanzHervas, A ;

Villar, C ;

Aguilar, M .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4681-4683

[6] Growth of high quality GaN layers with AlN buffer on Si(111) substrates [J].

Chen, P ;

Zhang, R ;

Zhao, ZM ;

Xi, DJ ;

Shen, B ;

Chen, ZZ ;

Zhou, YG ;

Xie, SY ;

Lu, WF ;

Zheng, YD .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :150-154

[7] Growth of high quality N-polar AlN(0001) on Si(111) by plasma assisted molecular beam epitaxy [J].

Dasgupta, Sansaptak ;

Wu, F. ;

Speck, J. S. ;

Mishra, U. K. .

APPLIED PHYSICS LETTERS, 2009, 94 (15)

[8] Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy [J].

Dugar, Palak ;

Kumar, Mahesh ;

Krishna, Shibin T. C. ;

Aggarwal, Neha ;

Gupta, Govind .

RSC ADVANCES, 2015, 5 (102) :83969-83975

[9] Competitive growth mechanisms of AlN on Si (111) by MOVPE [J].

Feng, Yuxia ;

Wei, Hongyuan ;

Yang, Shaoyan ;

Chen, Zhen ;

Wang, Lianshan ;

Kong, Susu ;

Zhao, Guijuan ;

Liu, Xianglin .

SCIENTIFIC REPORTS, 2014, 4

[10] Fabrication of non-polar GaN based highly responsive and fast UV photodetector [J].

Gundimeda, Abhiram ;

Krishna, Shibin ;

Aggarwal, Neha ;

Sharma, Alka ;

Sharma, Nita Dilawar ;

Maurya, K. K. ;

Husale, Sudhir ;

Gupta, Govind .

APPLIED PHYSICS LETTERS, 2017, 110 (10)

← 1 2 3 4 →