An Analysis of 30 MeV Proton Irradiation and Annealing Effects on Silicon NPN Power Transistors

被引：1
|
作者：
Khormizi, Y. Beik [1 ]
Saraee, Kh. Rezaee Ebrahim [1 ]
Aslani, Gh. [2 ]
机构：
[1] Univ Isfahan, Fac Adv Sci & Technol, Dept Nucl Engn, Esfahan 8174673441, Iran
[2] Nucl Sci & Technol Res Inst, POB 11365-8486, Tehran, Iran
来源：
IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE | 2019年 / 43卷 / A5期
关键词：
Electrical characteristic; Proton; DAMAGE;
D O I：
10.1007/s40995-018-0592-y
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
In this research, NPN power transistor of 2N5886 type was irradiated by 30 MeV protons in the dose range of 400 krad to 100 Mrad. The transistor parameters such as base current (I-B), dc current gain (h(FE)), transconductance (g(m)) and collector current (I-C) were studied before and after irradiation. To investigate the radiation damage of 2N5886 transistors, the total ionizing dose (TID) and displacement damage dose (D-d) which is a function of chip depth in the 2N5886 transistors were calculated. The results showed that the base current increased after irradiation and the h(FE) decreased in return. Also, the g(m) and collector current decreased with the increase in radiation dose. The isochronal annealing method was carried out on the irradiated 2N5886 transistors. The results showed that the base and collector currents decreased and increased, respectively, with increasing annealing temperature as a result of increased dc current gain. The recovery in h(FE) and other electrical parameters showed that 200 degrees C was insufficient and more recovery was observed at 500 degrees C.
引用
收藏
页码：2613 / 2617
页数：5
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