H-induced plastic deformation of Gd thin films studied by STM

被引：43

作者：

Pundt, A ^{[1
]}

Getzlaff, M

Bode, M

Kirchheim, R

Wiesendanger, R

机构：

[1] Univ Gottingen, Inst Mat Phys, D-37073 Gottingen, Germany

[2] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

[3] Univ Hamburg, Microstruct Res Ctr, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.61.9964

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface modification of thin Gd films during hydrogen absorption has been investigated an the nanometer scale by scanning tunneling microscopy. Two different types of surface pattern appear that can be attributed to hydrogen-induced plastic deformation processes within the Gd film. Disklike islands are formed first due to GdH2 precipitation and concomitant emission of extrinsic dislocation loops. At a later stage ramps appear on the surface as a result of glide displacements originating from misfit dislocations at the interface between the substrate and the thin film.

引用

页码：9964 / 9967

页数：4

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