High power-density 4H-SiC RIF MOSFETs

被引：3

作者：

Gudjonsson, G. ^{[1
]}

Allerstam, F.

Olafsson, H. O.

Nilsson, P. -A.

Hjelmgren, H.

Andersson, K.

Sveinbjornsson, E. O.

Zirath, H.

Rodle, T.

Jos, R.

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Philips Semicond BV, NL-6534 AE Nijmegen, Netherlands

来源：

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷

关键词：

4H-SiC; RF MOSFET; high power; high frequency;

D O I：

10.4028/www.scientific.net/MSF.527-529.1277

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

引用

页码：1277 / 1280

页数：4

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