A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations

被引：47

作者：

Turzynski, Marek ^{[1
]}

Kulesza, Wlodek J. ^{[2
]}

机构：

[1] Gdansk Univ Technol, Fac Elect & Control Engn, PL-80233 Gdansk, Poland

[2] Blekinge Inst Technol, Dept Appl Signal Proc, S-37141 Karlskrona, Sweden

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2016年 / 31卷 / 04期

关键词：

Behavioral model; capacitance-voltage characteristics; circuit simulation; MOSFETs; parameter extraction; semiconductor device modeling; VOLTAGE MOSFET; COMPACT MODEL; IGBT; IMPACT;

D O I：

10.1109/TPEL.2015.2445375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents results on behavior modeling of a general purpose metal-oxide-semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady state and in switching conditions. Methods of parameters extraction, including nonlinearity of parasitic capacitances and steady-state characteristics, are based on manufacturer datasheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-channel power MOSFET-type IRFP240 (Fairchild Semiconductor) rated at 20 A/200 V is performed in a dc/dc boost converter. The main features of the developed model have been compared with the properties of an analytical MOSFET model and a general MOSFET model embedded to a SABER simulator.

引用

页码：3096 / 3105

页数：10

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