Effect of Si on the wettability of SiC/Al system

被引：6

作者：

Ren, Shubin ^{[1
]}

Xu, Hui ^{[1
]}

He, Xinbo ^{[1
]}

Qu, Xuanhui ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Inst Adv Mat & Technol, Beijing 100083, Peoples R China

来源：

FRONTIERS OF MANUFACTURING AND DESIGN SCIENCE IV, PTS 1-5 | 2014年 / 496-500卷

关键词：

wettability; Al; SiC; Si; METAL-MATRIX COMPOSITES; PRESSURELESS INFILTRATION; ALUMINUM-ALLOYS; KINETICS;

D O I：

10.4028/www.scientific.net/AMM.496-500.275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, Si was added to the Al alloy to research its effect on the wettability between SiC and Al at 1000 degrees C. The results showed that the contact angle decreased with the increase of Si content in the Al alloys and it droped from 570 to 370 with the Si content from 0 to 12wt% and reached equillibrium with the further addition of Si to 18wt%. The improvement mechanism of Si on the wettabitliy is also discussed in this paper.

引用

页码：275 / 278

页数：4

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