Characterization of ZrN Thin Films Deposited by Reactive DC Magnetron Sputtering

ZrN thin films were deposited on silicon (1 0 0) wafers and glass slides by reactive DC magnetron sputtering technique. The effects of nitrogen gas flow rate on the crystal structure, morphology and electrical resistivity of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and four-point probe, respectively. The results revealed that the orientation of ZrN structure corresponded to (1 1 1), (2 0 0) and (3 1 1) planes. The (2 0 0) texture coefficient of the ZrN films decreased with increasing flow rate of the nitrogen gas. As the gas flow rate increased, the surface morphology of the ZrN films becomes smoother and the electrical resistivity of the ZrN films increased, ranging from 158 to 3811 mu Omega center dot cm.