Synthesis and characterization of 10% Sb doped CdTe thin films by stacked elemental layer (SEL) method

被引：23

作者：

Shanmugan, S. ^{[1
]}

Balaji, S. ^{[1
]}

Mutharasu, D. ^{[2
]}

机构：

[1] Thiagarajar Coll Engn, Thiagarajar Adv Res Ctr, Mat Lab, Madurai 625015, Tamil Nadu, India

[2] Univ Sains Malaysia, Sch Phys, Minden, Pulau Penang, Malaysia

来源：

MATERIALS LETTERS | 2009年 / 63卷 / 13-14期

关键词：

Thin films; Deposition; Stacked elemental layer; Structural properties; Solar energy materials;

D O I：

10.1016/j.matlet.2009.02.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antimony doped CdTe thin films have been prepared by stacked elemental layer (SEL) method. The X-ray diffraction spectra have demonstrated that the structure of the annealed films are polycrystalline in nature and mixed CdTe and Sb2Te3 phases have been observed at high annealing temperature (500 degrees C). The increased texture coefficient has been observed for planes (311) and (220) rather than (111) plane of CdTe in annealed stack (Te/Cd/Sb). Transmission spectra have been recorded and the calculated band gap lies between 1.45 and 1.68 eV. A pronounced PL spectrum has been noticed at 532 nm and depicted the presence of nano size particles in annealed thin films. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1189 / 1191

页数：3

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