MgO-based magnetic tunnel junction sensors array for non-destructive testing applications

被引：38

作者：

Guo, D. W. ^{[1
,2
]}

Cardoso, F. A. ^{[1
,2
]}

Ferreira, R. ^{[3
]}

Paz, E. ^{[3
]}

Cardoso, S. ^{[1
,2
]}

Freitas, P. P. ^{[1
,2
,3
]}

机构：

[1] INESC MN, P-1000029 Lisbon, Portugal

[2] IN Inst Nanosci & Nanotechnol, P-1000029 Lisbon, Portugal

[3] Int Iberian Nanotechnol Lab INL, P-4715330 Braga, Portugal

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期

基金：

欧盟第七框架计划;

关键词：

LOW-FREQUENCY NOISE;

D O I：

10.1063/1.4863933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A MgO-based magnetic tunnel junction (MTJ) sensor including 72 MTJs in series with 50 x 50 mu m(2) was successfully microfabricated. Due to a two-step annealing strategy, a linear transfer curve was obtained. The tunneling magnetoresistance (TMR) value is as high as 159% and the sensitivity reaches 2.9%/Oe. The field detectivity exhibits the lowest value at 1 V bias current, attaining 1.76 nT/Hz(0.5) and 170 pT/Hz(0.5) for 10 Hz and 1 kHz, respectively. The results show that the sensor could be applied in non-destructive testing systems which are used for detecting small defects inside conductive materials. (C) 2014 AIP Publishing LLC.

引用

页数：3

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