A variable channel-size MOSFET with lightly doped drain structure

被引：0

作者：

Nakanose, N

Arima, Y

Asano, T

Kosasayama, Y

Ueno, M

Kimata, M

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Fukuoka 8208502, Japan

[2] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Sensing Technol Dept, Amagasaki, Hyogo 6618661, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 4B期

关键词：

MOSFET; control gate; channel size modulation; LDD structure; electrical modulation;

D O I：

10.1143/JJAP.43.1763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a metal oxide semiconductor field-effect transistor (MOSFET) whose channel size can be modified by applying control voltage. The variable-channel-size MOSFET (VS-MOS) has a control gate between the main gate and the source/drain. The control gate possesses a gap at its end in the active region. Owing to this unique layout, the VS-MOS achieves continuous modulation of effective channel size and can be fabricated using the conventional complementary MOS (CMOS) fabrication process. Results of test device fabrication show that the channel size modulation can be enhanced by employing the lightly doped drain (LDD) structure. It is also shown that the logic threshold can he controlled in a CMOS inverter composed of the VS-MOS.

引用

页码：1763 / 1767

页数：5