Temperature dependence of performance of ZnO-based metal-semiconductor-metal ultraviolet photodetectors

被引：35

作者：

Li, Gaoming ^{[1
]}

Zhang, Jingwen ^{[1
]}

Hou, Xun ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Dept Elect Sci & Technol, Xian 710049, Shaanxi, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2014年 / 209卷

基金：

中国国家自然科学基金;

关键词：

ZnO; MSM; Ultraviolet; Photodetector; Temperature dependence; CONTACT ELECTRODES; FILMS; DETECTORS;

D O I：

10.1016/j.sna.2014.01.029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO as a wide bandgap semiconductor material can be used in ultraviolet photodetection for its direct bandgap (3.37 eV) corresponding to the energy of an ultraviolet photon. Recently, ZnO based ultraviolet photodetectors have been deeply investigated, people have successfully fabricated high-performance MSM (Metal-semiconductor-metal) photodetectors and vertical-structured ultraviolet photodetectors, moreover the sensitive spectral region for detection has been extended into solar-blind spectral range. However, the temperature dependence of photodetector's performance has seldom been studied, so we fabricated high performance ZnO based MSM ultraviolet photodetectors and then the temperature dependence of performance has been investigated. We compared the photo-response measurement results at room temperature with the results measured at other higher temperatures. We found that photocurrent and responsivity decrease with temperature rising in the temperature range from room temperature to 200 degrees C due to bandgap shrinkage and lattice scattering. Dark current decreases with temperature for mobility decrease below 100 degrees C, but it increases with temperature for thermal generation above 100 degrees C. These are not good for the stability of devices. Decreasing the working voltage may be an option to lessen the influence of temperature, but a low signal-to-noise ratio is the cost. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：149 / 153

页数：5

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