Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

被引：5

作者：

Shu, G. W. ^{[1
]}

Wang, J. S. ^{[1
]}

Shen, J. L. ^{[1
]}

Hsiao, R. S. ^{[2
]}

Chen, J. F. ^{[2
]}

Lin, T. Y. ^{[3
]}

Wu, C. H. ^{[4
]}

Huang, Y. H. ^{[4
]}

Yang, T. N. ^{[4
]}

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

[3] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung, Taiwan

[4] Atom Energy Council, Inst Nucl Energy Res, Long Tan, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 166卷 / 01期

关键词：

InAs; Quantum dots; Photoluminescence; OPTICAL-PROPERTIES; STRAIN;

D O I：

10.1016/j.mseb.2009.09.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：46 / 49

页数：4

共 50 条

[41] The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer
Shi, GX
Xu, B
Jin, P
Ye, XL
Cui, CX
Zhang, CL
Wu, J
Wang, ZG
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 1791 - 1794
[42] Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance
Hwang, JS
Chen, MF
Lin, KI
Tsai, CN
Hwang, WC
Chou, WY
Lin, HH
Chen, MC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A): : 5876 - 5879
[43] Photoluminescence and magnetophotoluminescence of circular and elliptical InAs/GaAs quantum dots
Kuldová, K.
Krápek, V.
Hospodková, A.
Zrzavecká, O. Bonaventurová
Oswald, J.
Hulicius, E.
Humlicek, J.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 983 - 986
[44] Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
Kiravittaya, S
Nakamura, Y
Schmidt, OG
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 224 - 228
[45] Polarization Symmetry of Vertical Photoluminescence from Columnar InAs/GaAs Quantum Dots
Mukai, Kohki
Watanabe, Keita
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2009, 7 : 537 - 540
[46] TEM and photoluminescence investigations of InGaAs/GaAs quantum well layers
Frigeri, C
Brinciotti, A
Ritchie, DM
Di Paola, A
SOLID STATE PHENOMENA, 1998, 63-4 : 375 - 381
[47] Ion-channeling studies of InAs/GaAs quantum dots
Niu, H
Chen, CH
Wang, HY
Wu, SC
Lee, CP
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 241 (1-4) : 470 - 474
[48] InAs/GaAs QUANTUM DOTS COVERED BY GaAsSb STRAIN REDUCING LAYER
Zikova, Marketa
Kubistova, Jana
Hospodkova, Alice
Pangrac, Jiri
Oswald, Jiri
Jiricek, Petr
NANOCON 2012, 4TH INTERNATIONAL CONFERENCE, 2012, : 204 - 208
[49] Photoluminescence studies of GaAs quantum dots and quantum rings
Nemcsics, Akos
Balazs, Janos
Podor, Balint
Makai, Janos
Stemmann, Andrea
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9, 2011, 8 (09): : 2826 - 2829
[50] Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures
Andrius Rimkus
Evelina Pozingytė
Ramūnas Nedzinskas
Bronislovas Čechavičius
Julius Kavaliauskas
Gintaras Valušis
Lianhe Li
Edmund H. Linfield
Optical and Quantum Electronics, 2016, 48

← 1 2 3 4 5 →