Selective electroplating of P-type and N-type areas on semiconductor surfaces

被引：0

作者：

Karmalkar, S ^{[1
]}

Oak, S ^{[1
]}

Venkatasubramanian, N ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Chennai 600036, India

来源：

MICROELECTRONICS JOURNAL | 2002年 / 33卷 / 11期

关键词：

deposition process; electroplating; pulse plating; metallization; semiconductors; contacts;

D O I：

10.1016/S0026-2692(02)00076-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show how N-type or P-type areas of semiconductor surfaces across which the doping polarity varies can be selectively electroplated using DC and periodic reverse (PR) plating voltages. The N-type (P-type) areas of N-type (P-type) substrates having diffused/implanted P-type (N-type) pockets can be selectively plated by a DC plating voltage. On the other hand, the diffused/implanted P-type pockets in N-type substrates can be selectively plated by a PR voltage. We also discuss a practical application of these results to semiconductor devices. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：967 / 970

页数：4

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