Atomic depth distribution and growth modes of Sn on Si(111)-4 x 1-In and α-√3 x √3-Au surfaces at room temperature

被引：1

作者：

Yamanaka, T

Ino, S

机构：

[1] Hokkaido Univ, Catalysis Res Ctr, Kita Ku, Sapporo, Hokkaido 0600811, Japan

[2] Utsunomiya Univ, Fac Engn, Dept Elect, Utsunomiya, Tochigi 3218585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 246卷 / 1-2期

关键词：

reflection high energy electron diffraction; segregation; surface structure; molecular beam epitaxy; metals;

D O I：

10.1016/S0022-0248(02)01735-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic depth distribution and growth modes of Sn on 4 x 1-In and alpha-root3 x root3-Au surfaces were studied at room temperature by using reflection high-energy electron diffraction and characteristic X-ray spectroscopy measurements as functions of glancing angle theta(g) of the incident electron beam. In the growth of Sn on an alpha-root3 x root3-Au surface, partial alloying between An and Sn occurred after deposition of I ML of Sn. During further deposition of Sn, alloying between An and Sn became more significant. During growth of Sn on a 4 x I-In surface, alloying between Sn and In occurred, and a part of In segregated to the upper parts of the film. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：9 / 14

页数：6

共 14 条

[11] An apparatus for beam-rocking reflection high-energy electron diffraction and total reflection angle x-ray spectroscopy [J].