Atomic depth distribution and growth modes of Sn on Si(111)-4 x 1-In and α-√3 x √3-Au surfaces at room temperature

Atomic depth distribution and growth modes of Sn on 4 x 1-In and alpha-root3 x root3-Au surfaces were studied at room temperature by using reflection high-energy electron diffraction and characteristic X-ray spectroscopy measurements as functions of glancing angle theta(g) of the incident electron beam. In the growth of Sn on an alpha-root3 x root3-Au surface, partial alloying between An and Sn occurred after deposition of I ML of Sn. During further deposition of Sn, alloying between An and Sn became more significant. During growth of Sn on a 4 x I-In surface, alloying between Sn and In occurred, and a part of In segregated to the upper parts of the film. (C) 2002 Elsevier Science B.V. All rights reserved.