Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition

被引:36
作者
Hayashi, H [1 ]
Iwasa, S
Vas, NJ
Yoshitake, T
Ueda, K
Yokoyama, S
Higuchi, S
Takeshita, H
Nakahara, M
机构
[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Fukuoka 8168580, Japan
[2] Kyushu Elect Power Co Inc, Miyazaki, Japan
[3] Cent Res Inst Elect Power Ind, Komae, Tokyo 2018511, Japan
[4] Kyushu Elect Power Co Inc, Fukuoka 8108720, Japan
关键词
optical CT; Bi : YIG; pulsed laser deposition; current sensor;
D O I
10.1016/S0169-4332(02)00364-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Bi-doped yttrium iron garnet (BixY3-xFe5O12, Bi:YIG) thin films, which can be used as electric current sensors, are grown on Gd3Ga5O12 (GGG) substrates by pulsed laser deposition (PLD) using an ArF excimer laser. The growth condition for high quality epitaxial Bi:YIG thin films is investigated by varying the PLD process parameters, such as the substrate temperature and ambient oxygen gas pressure. The epitaxial film growth is attained at the substrate temperature of around 500 C and at ambient oxygen pressure between 125 and 175 mTorr. The optical properties of epitaxial films are measured and the maximum magnetooptic sensitivity coefficient is observed to be 44.1degrees/T with a film thickness of about 0.7 mum at a wavelength of 500 nm. The results indicate that the PLD technique can be useful for realizing a miniature current sensing device with the Bi:YIG thin film. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:463 / 466
页数:4
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