Observation of coherently controlled photocurrent in unbiased, bulk GaAs

被引：336

作者：

Hache, A ^{[1
]}

Kostoulas, Y ^{[1
]}

Atanasov, R ^{[1
]}

Hughes, JLP ^{[1
]}

Sipe, JE ^{[1
]}

vanDriel, HM ^{[1
]}

机构：

[1] ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO,ON M5S 1A7,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.78.306

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate room temperature coherent generation and control of a directional photocurrent in bulk GaAs via simultaneous one- and two-photon interband absorption processes using phase-related 1 ps or 175 fs pulses at 0.775 and 1.55 mu m. Electrical currents generated in low-temperature-grown (LT) and normal bulk GaAs are collected via gold electrodes. Current densities as high as 3 nA/mu m(2) in LT-GaAs are measured for injected carrier densities as low as 10(14) cm(-3) and for peak irradiances of 18 MW cm(-2) (1.550 mu m) and 3 kW cm(-2) (0.775 mu m).

引用

页码：306 / 309

页数：4

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