Development of ultra-broadband terahertz time-domain ellipsometry

被引：1

作者：

Yamashita, Masatsugu ^{[1
]}

Otani, Chiko ^{[1
]}

机构：

[1] RIKEN RAP Terahertz Sensing & Imaging Lab, Aoba Ku, Sendai, Miyagi 9800845, Japan

来源：

TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS VI | 2015年 / 9585卷

关键词：

THz and mid-infrared spectroscopy; spectroscopic ellipsometry; dielectric function; carrier dynamics; SPECTROSCOPIC ELLIPSOMETRY; OPTICAL-PROPERTIES; DOPED SILICON; PULSES; THZ; GENERATION; FILMS;

D O I：

10.1117/12.2186928

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We developed a reflection type ultra-broad band terahertz time-domain spectroscopic ellipsometry covering the frequency range from 0.5 to 30 THz. The system utilizes two nonlinear optical crystals of GaP and GaSe as terahertz and mid-infrared sources, respectively, and employs a detector based on a photoconductive antenna switch using a low temperature grown GaAs (LT-GaAs) epitaxial layer transferred on Si substrate. By switching the emitter, the measurable frequency range can be easily changed from the 0.5-7.8 THz range to the 7.8-30 THz range without additional optical alignment. We measured the dielectric function of a p-type InAs wafer and the complex optical conductivity of an indium tin oxide (ITO) thin film. The obtained carrier density and the mobility of the ITO thin film show good aggreement with that obtained by the Hall

引用

页数：7

共 28 条

[1]

Born M., 1999, PRINCIPLES OPTICS

[2] Recent Progresses in Terahertz Wave Air Photonics [J].

Dai, Jianming ;

Clough, Benjamin ;

Ho, I-Chen ;

Lu, Xiaofei ;

Liu, Jingle ;

Zhang, Xi-Cheng .

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2011, 1 (01) :274-281

[3]

Edwards D.F., 1985, Handbook of optical constants of solids

[4]

Exterand M. va, 1990, J OPT SCI AM B, V7, P2006

[5]

Fujiwara H., 2009, SPECTROSCOPIC ELLIPS

[6] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[7] Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz [J].

Huber, R ;

Brodschelm, A ;

Tauser, F ;

Leitenstorfer, A .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3191-3193

[8] Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy [J].

Jeon, TI ;

Grischkowsky, D .

APPLIED PHYSICS LETTERS, 1998, 72 (23) :3032-3034

[9] Simulation of terahertz generation at semiconductor surfaces [J].

Johnston, MB ;

Whittaker, DM ;

Corchia, A ;

Davies, AG ;

Linfield, EH .

PHYSICAL REVIEW B, 2002, 65 (16)

[10] Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer [J].

Kasai, S. ;

Katagiri, T. ;

Takayanagi, J. ;

Kawase, K. ;

Ouchi, T. .

APPLIED PHYSICS LETTERS, 2009, 94 (11)

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