Core-Shell Heterojunction of Silicon Nanowire Arrays and Carbon Quantum Dots for Photovoltaic Devices and Self-Driven Photodetectors

被引：244

作者：

Xie, Chao ^{[1
,2
]}

Nie, Biao ^{[2
]}

Zeng, Longhui ^{[2
]}

Liang, Feng-Xia ^{[1
]}

Wang, Ming-Zheng ^{[2
]}

Luo, Linbao ^{[2
]}

Feng, Mei ^{[3
]}

Yu, Yongqiang ^{[2
]}

Wu, Chun-Yan ^{[2
]}

Wu, Yucheng ^{[1
]}

Yu, Shu-Hong ^{[3
]}

机构：

[1] Hefei Univ Technol, Anhui Prov Key Lab Adv Funct Mat & Devices, Sch Mat Sci & Engn, Hefei 230009, Peoples R China

[2] Hefei Univ Technol, Anhui Prov Key Lab Adv Funct Mat & Devices, Sch Elect Sci & Appl Phys, Hefei 230009, Peoples R China

[3] Univ Sci & Technol China, Dept Chem, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Hefei Natl Lab Phys Sci Microscale,Div Nanomat &, Hefei 230026, Peoples R China

来源：

ACS NANO | 2014年 / 8卷 / 04期

基金：

中国国家自然科学基金;

关键词：

silicon nanowire array; carbon quantum dots; surface passivation; relative balance; barrier height; HYBRID SOLAR-CELLS; VISIBLE-LIGHT; SI; STABILITY; DESIGN;

D O I：

10.1021/nn501001j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at +/- 0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It Is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

引用

页码：4015 / 4022

页数：8

共 39 条

[1] Tunable Graphene-Silicon Heterojunctions for Ultrasensitive Photodetection [J].