Structure and Magnetic Properties of Co Epitaxial Thin Films Grown on MgO Single-Crystal Substrates

被引：29

作者：

Nukaga, Yuri ^{[1
]}

Ohtake, Mitsuru ^{[1
]}

Futamoto, Masaaki

Kirino, Fumiyoshi ^{[2
]}

Fujita, Norihito ^{[3
]}

Inaba, Nobuyuki ^{[3
]}

机构：

[1] Chuo Univ, Fac Sci & Engn, Bunkyo Ku, Tokyo 1128551, Japan

[2] Tokyo Natl Univ Fine Arts & Mus, Grad Sch Fine Arts, Taito Ku, Tokyo 1108714, Japan

[3] Yamagata Univ, Dept Elect & Elect Engn, Yonezawa, Yamagata 9928510, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2009年 / 45卷 / 06期

关键词：

Co thin film; epitaxial growth; FMR; single-crystal substrate; CO/CR BILAYER FILMS; TUNNEL-JUNCTIONS; DEPENDENCE;

D O I：

10.1109/TMAG.2009.2018643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Co epitaxial thin films were prepared on single-crystal MgO substrates of (100), (110), and (111) planes heated at 300 degrees C by ultra high vacuum molecular beam epitaxy. The film crystal structure varies depending on the substrate orientation. On MgO(100) substrate, a Co(11 (2) over bar0) epitaxial bi-crystalline film with an hcp structure is obtained. A Co(110) single-crystal film with an fcc structure is formed on MgO(1 10) substrate, whereas a Co(0001) single-crystal film with an hcp structure is grown on MgO(1 11) substrate. Co film growth on MgO substrates follows the Volmer-Weber mode. The in-plane magnetization properties reflect the magnetocrystalline anisotropy of bulk hcp-Co or fcc-Co crystal. The Gilbert's damping constants of these 40-nm-thick epitaxial Co films are determined.

引用

页码：2519 / 2522

页数：4

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